Teacher Info:
 

Dr. Md. Shafiqul Islam

Professor

 

 

Academic Qualifications:

  • B.Sc. Eng., M.Sc. Eng., (BUET, Bangladesh), PhD (Ireland)
  • FIEB, Bangladesh
  • SMIEEE, USA
  • AFICTP, Italy

Correspondence:

Telephone: +88-01815007759 (cell)

+880-2-(9665650-80, 8614640-44, 8616833-38)/Ext. 7933 (Off.) 7373 (Res.)
FAX: +880-2-8613046/8613026/8611594
Emails: islams@eee.buet.ac.bd, islams44@yahoo.com Web: http://teacher.buet.ac.bd/islams/

Teaching Experiences:

  • July 2005 ~ Present, Dept. of EEE, BUET, Dhaka, Professor
  • April 2005 ~ June 2005, RIE, Shizuoka University, Japan, Visiting Professor
  • June 2003 ~ March  2005, RIE, Shizuoka University, Japan, Associate Professor
  • February 1999 ~ June 2003, Dept. of EEE, BUET, Dhaka, Associate Professor
  • Jan 1992 ~ Feb 1999, Dept. of EEE, BUET, Dhaka, Assistant Professor
  • Jul 1989 ~ Jan 1992, Dept. of EEE, BUET, Dhaka, Lecturer

Teaching:

  • EEE 6402 - Compound Semiconductor Devices
  • EEE 421 - VLSI-I
  • EEE 207 - Electronics-II
  • EEE 201 - Electronics-I

Research Interests:

  • Device physics, modeling, fabrication and characterization of high-speed devices (MESFETs and HEMTs) using different III-V compound semiconductor materials such as GaAs, GaN, SiC and InP.
  • Monolithic Microwave Integrated Circuits (MMIC) fabrication, design and characterization.
  • III-V MicroElectro Mechanical Systems (MEMS) fabrication and implementation.
  • Fabrication and characterization of photonic devices such as SHG, modulators, etc. using ferroelectric material (Lithium Niobate).
  • Fabrication and characterization of optoelectronic devices such as Laser diodes using III-V compound semiconductors.

Publications:

    (a) Journal Publications:
  1. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Very-deep nanometer-size domain inversion in LiNbO3: proposal for circular form full cover electrodes," Jpn. J. Appl. Phys. Vol.66, No.7A, 2007, pp.4138-4143.
  2. M. Minakata, M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Nanometer size periodic domain inversion in LiNbO3 substrate using circular form full cover electrodes," Solid-State Electron.., Vol.50, 2006, pp. 848-852.
  3. M. S. Islam and M. M. Zaman, "A seven-parameter nonlinear I-V characteristics model for sub-mm range GaAs MESFETs," Solid-State Electron., Vol.48, 2004, pp. 1111-1117.
  4. M. S. Islam, M. Q. Huda, A. H. M. Zahirul Alam and P. J. McNally, "Performances of Novel Pd/Sn and Pd/Sn/Au Ohmic Metallizations to n-GaAs," Microelectron. Eng., Vol. 60, Issue 3-4, 2002, pp. 457-467.
  5. M. S. Islam and P. J. McNally, "Novel Non-alloyed Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts for the Fabrication of GaAs MESFET’s," IEEE Trans. Electron. Dev., Vol. 48, No. 4, 2001, pp. 823-825.
  6. M. Q. Huda, S. A. Siddiqui and M. S. Islam, "Explaining the Erbium Luminescence Profile in Silicon Under Short Excitation Pulses," Solid-State Comm., Vol. 118, 2001, pp. 235-239.
  7. M. S. Islam, M. Q. Huda, A. H. M. Zahirul Alam and P. J. McNally, "Performances of Novel Pd/Sn and Pd/Sn/Au Ohmic Metallizations to n-GaAs," Microelectron. Eng., 2001 (accepted in August 9, 2001).
  8. M. S. Islam, P. J. McNally, A. H. M. Zahirul Alam and M. Q. Huda, "Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFET’s: Technology and Performance," Solid-State Electron., Vol. 44, 2000, pp. 655-661.
  9. M. S. Islam, "Recent Advances in Ni-Based Ohmic Contacts to n-GaAs," J. Elect. Eng., Vol. 27,   No. 1, 1999, pp. 43-55.
  10. M. S. Islam, "Characterization of GaAs MESFET’s with Novel Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol.27, No. 2, 1999, pp. 31-34.
  11. M. S. Islam and P. J. McNally, "Thermally Stable Pd/Sn and Pd/Sn/Au Ohmic Contacts to n-type GaAs," Thin Solid Films, Vol.320, 1998, pp.253-259.
  12. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Properties of Pd/Sn Ohmic Contacts on  n-GaAs," J. Materials Processing Technol., Vol. 77, 1998, pp.42-49.
  13. M. S. Islam and M. Q. Huda, "GaAs MESFETs Fabricated with Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts," J. Elect. Eng., Vol. 26, No. I & II, 1998, pp. 5-7.
  14. M. S. Islam and P. J. McNally, "A Comparison Study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni Ohmic Contacts to n-GaAs," Microelectron. Eng., Vol. 40, 1998, pp.35-42.
  15. M. S. Islam and P. J. McNally, "Effects of Metallization Thickness on the Thermal and Long-Term Stability of Pd/Sn Ohmic Contacts to n-GaAs," Phys. Stat. Sol. (a), Vol. 165, 1998, pp.417-426.
  16. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "The Importance of the Pd to Sn Ratio and Annealing Cycles on the Performance of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 292, 1997, pp. 264-269.
  17. M. S. Islam, P. J. McNally and D. C. Cameron, "Thermal Stability of the Non-alloyed Pd/Sn and Pd/Ge Ohmic Contacts to n-GaAs," Thin Solid Films, Vol. 308-309, 1997, pp.607-610.
  18. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Au Overlayers on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Thin Solid Film, Vol. 290-291, 1996, pp. 417-421.
  19. S. I. Khan and M. S. Islam, "Analysis of a Balanced Output Converter," J. Elect. Eng., Vol.19, 1991, pp.9-14.
    (b) Conference and Workshop Proceedings:
  1. M. S. Islam, M. Islam, M. R. Hasan and S. M. N. Islam, "An improved DC I-V characteristics model for SiC MESFETs incorporating self-heating effect," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 204-208.
  2. N. Karmakar, M. Z. Sadi, M. K. Alam and M. S. Islam, "A novel 10 transistor low-power and high speed pass transistor based full adder cell," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 405-408.
  3. N. Karmakar, M. Z. Sadi, M. K. Alam and M. S. Islam, "A novel dual sleep approach to low leakage and area efficient VLSI design," Proc. 2009 IEEE Regional Symposium on Micro and Nano Electronics (RSM2009), Kota Bharu, Malaysia, August 10-12, 2009, pp. 409-414.
  4. M. S. Islam, M. Islam, M. R. Hasan and S. M. N. Islam, "An improved nonlinear DC I-V characteristics model for nanometer range GaAs MESFETs," The IEEE TENCON 2009, Singapore, November 23-26, 2009 (accepted).
  5. M. S. Islam and M. Minakata, "Very deep nanoscale domain inversion in LiNbO3 for high power and high efficiency SHG devices," Proc. 5th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 555-560.
  6. M. Z. Sadi, N. Karmakar, M. K. Alam and M. S. Islam, "Comparative analysis of subthreshold swing models for different double gate MOSFETs," Proc. 5th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 152-157.
  7. R. R. Hossain, M. K. Chowdhury, E. M. Shujon and M. S. Islam, "Optical directional coupler switch using domain inversion technology," Proc. 5th  Int. Conf. on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, December 20-22, 2008, pp. 113-116.
  8. M. S. Islam, M. Minakata, S. Nagano, S. Yoneyama, T. Sugiyama and H. Awano, "Fabrication of  very-deep nanometer-size domain inversion in LiNbO3 by circular form FCE," 4th  Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 257-261.
  9. T.A. Amin, C.M. Arif, A.T. Rasin, S.M. Mominuzzaman and M. S. Islam, "Spectral photoresponse og nitrogen incorporated carbon thin films," Proc. 4th  Int. Conf. on Electrical and Computer Engineering (ICECE 2006), Dhaka, Bangladesh, December 19-21, 2006, pp. 374-377.
  10. M. S. Islam, S. Nagano, S. Yoneyama, T. Sugiyama, H. Awano and M. Minakata, "Fabrication of  nanometer size periodic domain inversion in LiNbO3 using circular form FCE method," Proc. 4th Int’l Conf. on Global Research and Education: Inter-academia 2005, Wuppertal, Germany, Sept. 19-22, 2005, pp. 1-9.
  11. M. S. Islam, S. Nagano, S. Yoneyama, and M. Minakata, "Formation of small size domain inversion using circular form FCE method," Optics Japan 2004, Osaka University, Japan, 4pD6, 2004, pp.76-77.
  12. S. Nagano, M. S. Islam, S. Yoneyama and M. Minakata, "Formation of small size domain inversion using circular form FCE method," Proc. 8th Joint Int’l Conf. on Advanced Science & Technology (JICAST2004), Zhejiang University, Hangzhou, China, December 24-25, 2004, pp. 59-62.
  13. S. Yoneyama, M. S. Islam, K. Suzuki, H. Awano, and M. Minakata, "Bio-conjugate photosensitive FET using photosystem I," Ext. Abst. The 52nd Spring Meeting, The Japan Soc. Appl. Phys., Saitama University, Japan, March 29- April 1, 2004, YY6, p.115.
  14. M. Zaman and M. S. Islam, "Modeling of Nonlinear I-V Characteristics for Submicron GaAs MESFETs," Proc. 2nd Int. Conf. on Electrical and Computer Engineering (ICECE 2002), Dhaka, Bangladesh, December 26-28, 2002, pp.304-307.
  15. M. S. Islam, M. Rahman, M. M. Hasan, M. N. Islam, K. Arifuzzaman, M. Q. Huda and A. H. M. Zahirul Alam, "Analytical Modeling of Deep-Sub-Micron Thin-Film Fully-Depleted Cylindrical Gate MOSFET," Proc. 9th Int. Symp. on Integrated Circuits, Devices & Systems (ISIC-2001), Singapore, 3-5 September 2001, pp. 386-389.
  16. M. S. Islam, M. Rahman, Q. A. Iqbal, M. K. Husain and M. Q. Huda, "Analytical Modelling of Threshold Voltage Shift in Short Channel Fully Depleted Cylindrical Gate MOSFET," Proc. IEEE Int. Conf. on Electrical & Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh,  pp. 179-182.
  17. M. Q. Huda and M. S. Islam, "Mathematical Modeling for Erbium Luminescence in Silicon," Proc. IEEE Int. Conf. on Electrical and Computer Eng. (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh, pp. 44-45.
  18. A. H. M. Zahirul Alam, M. F. Momen, M. S. Islam and P.  K. Saha, "Analytical Model for Subthreshold Current in Short-channel Fully-depleted SOI MOSFETs Incorporating Velocity Overshoot," Design, Modeling and Simulation in Microelectronics, 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4228, pp. 259-269.
  19. M. S. Islam, M. Rahman, Q. A. Iqbal, M. T. Khan and M. K. Husain, "Double-Gate SOI MOSFET’s – Trends in Scaling Theory," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 529-542.
  20. M. Q. Huda and M. S. Islam, "The 1.54 micrometer Erbium Luminescence in Silicon-germanium," Int’l Symposium on Microelectronics and Applications (ISMA’2000), 28-30 November 2000, Singapore, Proc. of SPIE, Vol. 4227, pp. 44-47.
  21. M. S. Islam and P. J. McNally, "SIMS Analysis of Non-alloyed Pd/Sn, Pd/Sn/Au and Alloyed Au/Ge/Au/Ni/Au Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 497-504.
  22. M. S. Islam, P. J. McNally, M. Q. Huda and A. H. M. Zahirul Alam, "A Comparative Study of Non-alloyed Pd-based and Alloyed Ni-based Ohmic Contacts to n-GaAs," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 505-512.
  23. M. Q. Huda, A. R. Peaker and M. S. Islam, "The Role of Annealing Temperature on Optical Activation of Erbium Atoms in Ion Implanted Structures," Proc. Int. Conf. on Manufacturing (ICM2000), Dhaka, Bangladesh, 24-26 February 2000, pp. 489-496.
  24. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Measurement of Semiconductor Energy Gap Using Absorption Spectrum," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India, 14-18 December 1999, pp. 234-238.
  25. M. S. Islam, A. H. M. Zahirul Alam and M. Q. Huda, "Advantages and Problems of Thermal Evaporation and Conventional Annealing of Metallizations for the Fabrication of GaAs MESFET’s," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India,  14-18 December 1999, pp. 588-593.
  26. M. Q. Huda, S. A. Siddique, M. N. Islam and M. S. Islam, "The Mechanism for Erbium Luminescence in Silicon at 1.54 micrometer," in Photonics and Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, S. T. Ho, Y. Zhou, W. W. Chow and Y. Arakawa,, Editors, Proc. of SPIE, Vol. 3899, 1999, pp. 330-334.
  27. M. Q. Huda and M. S. Islam, "Erbium Centers in Silicon and the Corresponding Luminescence," Proc. of the 10th Int. Workshop on the Physics of Semiconductor Devices (IWPSD99), IIT Delhi, India,  14-18 December 1999, pp. 387-390.
  28. M. Q. Huda and M. S. Islam, "X-Ray Analysis of Epitaxially Recrystallized Si/Si1-xGex/Si Structures," Proc. Int. Conf. on Material Science and Technology, BUET, Dhaka, Bangladesh, 23-27 October 1999, pp. 136-139.
  29. M. S. Islam, "Recent Developments in Ohmic Metallizations to p-type GaAs," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. C82-C93.
  30. M. S. Islam, "Non-alloyed Pd/Sn/Au and Alloyed Au-Ge/Ni Ohmic Contacts to n-GaAs: A Comparative Study," Proc. Int. Conf. on Structure, Processing and Properties of Materials (SPPM'97), BUET, Dhaka, Bangladesh, 15-17 November 1997, pp. D11-D16.
  31. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Comparison of Pd/Sn and Pd/Sn/Au Thin-Film Systems for Device Metallization," Mater. Res. Soc. Symp. Proc., Vol. 427, 1996, pp. 583-589 (Mater. Res. Soc. (MRS) 1996 Spring Meeting, San Francisco, USA,  8-12 April 1996).
  32. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Ohmic Contacts to n-type GaAs made with Pd/Sn and Pd/Sn/Au Metallizations," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 385-388.
  33. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Effects of Annealing Cycles on the Electrical and Morphological Characteristics of Pd/Sn Ohmic Contacts to n-GaAs," Proc. of the 8th Mediterranean Electrotechnical Conf. (melecon '96), Bari, Italy, 13-16 May 1996, pp. 1294-1297.
  34. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "Characterization of Pd/Sn Ohmic Contacts on n-GaAs using Electrical Measurements, EDAX and SIMS," Proc. of the 3rd  IEEE Int. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO'95), King's College London, UK, 27 November 1995, pp. 26-31.
  35. M. S. Islam, P. J. McNally, D. C. Cameron and P. A. F. Herbert, "A Novel Pd-Based Ohmic Contact System for n-type GaAs: A Structural, Morphological and Electrical Investigation," Proc. of the 6th European Conf. on Applications of Surface and Interface Analysis (ECASIA'95), Montreux, Switzerland, 9-13 October 1995, published by Wiley & Sons, pp.299-302.
  36. M. S. Islam, P. J. McNally and D. C. Cameron, "Palladium-Based Ohmic Contacts to n-type GaAs- A Review of Recent Advances," Proc. of the Int. Conf. on Advances in Materials and Processing Technologies (AMPT'95), Vol. I, Dublin City University, Ireland, 8-12 August 1995, pp. 18-29.
  37. S. I. Khan and M. S. Islam, "Analysis of a Single Phase Direct Frequency Changer for Input Unbalance Correction," Proc. of 1991 Int. Conf. on Industrial Electronics, Control and Instrumentation (IECON’91), Kobe, Japan, 28 Oct.-1 Nov. 1991, pp.216-221.

(c) Contribution to Published Books:

Author of text book

  • "Communication Engineering II ," Mita Prokashani, June 2000, Dhaka, Bangladesh.

Editor of text books

Edited the following text books, Bangladesh Technical Education Board, Dhaka.

  • Md. Minazul Haque, "Network, Filters and Transmission Line," Boi Bitan, 1999, Dhaka, Bangladesh.
  • Mohammad Ali Miah, "Electrical Measurements and Measuring Instruments-II," Mita Prokashani, 1999, Dhaka, Bangladesh.
  • Md. Ayet Ali, "Computer Printing -I," The Imperial Press, 2000, Dhaka, Bangladesh.
  • Mohammad Ali Miah, "Electronic Technology-I," Mita Prokashani, 2000, Dhaka, Bangladesh.

 Co-author:

Abul Barkat, M. Rahman, S. Zaman, A. Podder, S. Halim, N.N. Ratna, M. Majid, A.K.M. Maksud, A. Karim and S. Islam, "Economic and Social Impact Study of the Rural Electrification Program in Bangladesh," Human Development Research Centre, NRECA International Ltd. Partners with the Rural Electrification Board of Bangladesh and USAID for the Rural Power for Proverty Reduction (RPPR) Program (SUAID CA 388-A-00-97-00040-00), Dhaka, October 2002.

 (d) Reviewer of Conference Papers/Journals:

  • Worked as a Reviewer of technical papers, the 6th European Conference on Applications of Surface and Interface   Analysis (ECASIA'95), Montreux, Switzerland, 9-13 October 1995. The proceedings were published by Wiley & Sons.

  • Worked as a Reviewer of technical papers, the IEEE International Conference on Electrical & Computer Engineering (ICECE 2001), 5-6 January 2001, Dhaka, Bangladesh.

  • Worked as a Reviewer of technical papers, the 4th IEEE International Conference on Electrical & Computer Engineering (ICECE 2006), December 19-21 December 2006, Dhaka, Bangladesh.

  • Worked as a Reviewer of technical papers, the 5th IEEE International Conference on Electrical & Computer Engineering (ICECE 2008), December 20-22 December 2008, Dhaka, Bangladesh.

  • Working as a Referee, Electronics Letters, UK, since May 2000.

  • Reviewer of 2001 IEEE region 10 student paper contest (Postgraduate).

 

 

 

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